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 2SC3838
Elektronische Bauelemente 50 mA, 20 V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of "-C" specifies halogen and lead free
FEATURES
High transition frequency Small rbb'*Cc and high gain Small NF 1
Base
1
SOT-23
Collector
3
A
3
L
3
Top View
2
CB
1 2
PACKAGE INFORMATION
Weight: 0.0078g (Approximately)
2
Emitter
K
E D
F
REF.
G
Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50
H
REF. G H J K L
J
Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP.
MARKING
AD
A B C D E F
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC Pc TJ, TSTG
Ratings
20 11 3 50 100 +150, -55 ~ +150
Unit
V V V mA mW C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage DC Current Gain Transition Frequency Output Capacitance Collector-Base Time Constant Noise Figure
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cob rbb'*Cc F
Min.
20 11 3 56 1.4 -
Typ.
3.5
Max.
0.5 0.5 500 180 1.5 12 -
Unit
V V V A A mV
Test Conditions
IC=10A, IE=0 IC= 1mA, IB=0 IE=10A, IC=0 VCB=10V, IE=0 VEB= 2V, IC=0 IC=-10mA, IB= 5mA VCE= 10V, IC=5mA
GHz pF pS dB
VCE=10V, IC= 10mA, f = 500MHz VCB=10V, IE=0A, f=1MHz IC=10mA,VCB=10V, f=31.8MHz VCE=6V, IC= 2mA, f = 500MHz, Rs = 50
CLASSIFICATION OF hFE
Rank Range
N 56 - 120 P 82 - 180
01-June-2005 Rev. A
Page 1 of 3
2SC3838
Elektronische Bauelemente 50 mA, 20 V NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
01-June-2005 Rev. A
Page 2 of 3
2SC3838
Elektronische Bauelemente 50 mA, 20 V NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES (cont'd)
01-June-2005 Rev. A
Page 3 of 3


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