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2SC3838 Elektronische Bauelemente 50 mA, 20 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES High transition frequency Small rbb'*Cc and high gain Small NF 1 Base 1 SOT-23 Collector 3 A 3 L 3 Top View 2 CB 1 2 PACKAGE INFORMATION Weight: 0.0078g (Approximately) 2 Emitter K E D F REF. G Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. MARKING AD A B C D E F ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings 20 11 3 50 100 +150, -55 ~ +150 Unit V V V mA mW C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage DC Current Gain Transition Frequency Output Capacitance Collector-Base Time Constant Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cob rbb'*Cc F Min. 20 11 3 56 1.4 - Typ. 3.5 Max. 0.5 0.5 500 180 1.5 12 - Unit V V V A A mV Test Conditions IC=10A, IE=0 IC= 1mA, IB=0 IE=10A, IC=0 VCB=10V, IE=0 VEB= 2V, IC=0 IC=-10mA, IB= 5mA VCE= 10V, IC=5mA GHz pF pS dB VCE=10V, IC= 10mA, f = 500MHz VCB=10V, IE=0A, f=1MHz IC=10mA,VCB=10V, f=31.8MHz VCE=6V, IC= 2mA, f = 500MHz, Rs = 50 CLASSIFICATION OF hFE Rank Range N 56 - 120 P 82 - 180 01-June-2005 Rev. A Page 1 of 3 2SC3838 Elektronische Bauelemente 50 mA, 20 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 2 of 3 2SC3838 Elektronische Bauelemente 50 mA, 20 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES (cont'd) 01-June-2005 Rev. A Page 3 of 3 |
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